D. Wolansky

Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$-Based RRAM Devices

Christian Walczyk, Damian Walczyk, Thomas Schroeder et al. · IEEE Transactions on Electron Devices · 2011 · 239 citations

Engineering, Electrical Engineering, Materials Science +17

SiGe HBT technology with f<inf>T</inf>/f<inf>max</inf> of 300GHz/500GHz and 2.0 ps CML gate delay

B. Heinemann, R. Barth, D. Bolze et al. · 2010 · 164 citations

Engineering, Electrical Engineering, Microelectronics +9

SiGe HBT with fx/fmax of 505 GHz/720 GHz

B. Heinemann, H. Rücker, R. Barth et al. · 2016 · 149 citations

Engineering, Electrical Engineering, Materials Science +17

A 0.13 $\mu{\hbox {m}}$ SiGe BiCMOS Technology Featuring f$_{T} $/f$_{\max}$ of 240/330 GHz and Gate Delays Below 3 ps

H. Rücker, B. Heinemann, Wolfgang Winkler et al. · IEEE Journal of Solid-State Circuits · 2010 · 148 citations

Engineering, Electrical Engineering, Microelectronics +13

Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

Ch. Walczyk, Christian Wenger, Rakesh Sohal et al. · Journal of Applied Physics · 2009 · 107 citations

Natural Sciences, Electrical Engineering, Materials Science +16