Concepedia

D. Bolze

DB

22

Publications

948

Citations

16

H-Index

1976

Active since

Affiliations

Leibniz Institute for High Performance Microelectronics(Current)

Centre National de la Recherche Scientifique

Laboratoire d'Analyse et d'Architecture des Systèmes

Institut für Solartechnologien (Germany)

Daimler (Germany)

D. Bolze is an author at Leibniz Institute for High Performance Microelectronics specializing in engineering, microelectronics, and applied physics.

Top concepts

EngineeringMicroelectronicsApplied PhysicsElectrical EngineeringNanoelectronicsElectronic EngineeringVlsi DesignMaterial ScienceComputer EngineeringPhysics

Publications per year

1976–2010

22

Publications

22

SiGe HBT technology with f<inf>T</inf>/f<inf>max</inf> of 300GHz/500GHz and 2.0 ps CML gate delay

B. Heinemann, R. Barth, D. Bolze et al. · 2010 · 163 citations

Low-power Electronics, Electrical Engineering, Engineering +12

Novel collector design for high-speed SiGe:C HBTs

B. Heinemann, H. Rücker, R. Barth et al. · 2003 · 107 citations

Electrical Engineering, Engineering, Vlsi Design +8

Optical properties of aluminium nitride prepared by chemical and plasmachemical vapour deposition

J. Bauer, L. Biste, D. Bolze · physica status solidi (a) · 1977 · 102 citations

Aluminium Nitride, Optical Materials, Engineering +17

Mechanisms of B deactivation control by F co-implantation

N. E. B. Cowern, B. Colombeau, J. D. Benson et al. · Applied Physics Letters · 2005 · 69 citations

Materials Science, Ultrashallow B Implants, Implantable Device +12

SiGe:C BiCMOS technology with 3.6 ps gate delay

H. Rücker, B. Heinemann, R. Barth et al. · 2004 · 56 citations

Electrical Engineering, Engineering, Vlsi Design +10

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