R. Barth

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Publications

Citations

1.7K

H-Index

Active since

1998

Affiliations

Leibniz Institute for High Performance Microelectronics(Current)

Institut für Solartechnologien (Germany)

Infineon Technologies (Germany)

Silicon Radar (Germany)

Fraunhofer Institute for Reliability and Microintegration

R. Barth is an author at Leibniz Institute for High Performance Microelectronics specializing in microelectronics, engineering, and electrical engineering.

Publications per year

1998–2016

Publications

SiGe HBT technology with f<inf>T</inf>/f<inf>max</inf> of 300GHz/500GHz and 2.0 ps CML gate delay

B. Heinemann, R. Barth, D. Bolze et al. · 2010 · 164 citations

Engineering, Electrical Engineering, Microelectronics +9

SiGe HBT and BiCMOS process integration optimization within the DOTSEVEN project

J. Böck, Klaus Aufinger, S. Boguth et al. · 2015 · 163 citations

Engineering, Electrical Engineering, Electronic Materials +14

SiGe HBT with fx/fmax of 505 GHz/720 GHz

B. Heinemann, H. Rücker, R. Barth et al. · 2016 · 149 citations

Engineering, Electrical Engineering, Materials Science +17

A 0.13 $\mu{\hbox {m}}$ SiGe BiCMOS Technology Featuring f$_{T} $/f$_{\max}$ of 240/330 GHz and Gate Delays Below 3 ps

H. Rücker, B. Heinemann, Wolfgang Winkler et al. · IEEE Journal of Solid-State Circuits · 2010 · 148 citations

Engineering, Electrical Engineering, Microelectronics +13

Novel collector design for high-speed SiGe:C HBTs

B. Heinemann, H. Rücker, R. Barth et al. · 2003 · 107 citations

Engineering, Electrical Engineering, Electronic Materials +16

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