2016 · 149 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave Integrated CircuitsMicrowave OscillatorsMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsDevice Scaling EffectsHigh-frequency ElectronicsHigh-speed Circuit DesignMicrowave Integrated Circuit DesignMillimeter-wave Integrated CircuitsMonolithic Microwave Integrated CircuitsSilicon Germanium Bipolar TransistorSilicon Microwave Integrated Circuits
An experimental SiGe HBT technology featuring fT/fmax/BVCEO = 505 GHz/720 GHz/1.6 V and a minimum CML ring oscillator gate delay of 1.34 ps is presented. The improved speed compared to our previous SiGe HBT developments originates primarily from an optimized vertical profile, an additional decrease of the base and emitter resistance which is made possible by combining millisecond annealing with a low-temperature backend, and from lateral device scaling.
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Half-Terahertz SiGe BiCMOS technology
H. Rücker, B. Heinemann, A. Fox · 2012 · 217 citations
SiGe HBT Technology: Future Trends and TCAD-Based Roadmap
M. Schröter, Tommy Rosenbaum, P. Chevalier et al. · Proceedings of the IEEE · 2016 · 180 citations
Engineering, Computer Engineering, Electrical Engineering +17
Record RF performance of 45-nm SOI CMOS Technology
Sungjae Lee, B. Jagannathan, Shreesh Narasimha et al. · 2007 · 179 citations
SiGe HBT and BiCMOS process integration optimization within the DOTSEVEN project
J. Böck, Klaus Aufinger, S. Boguth et al. · 2015 · 163 citations
Engineering, Electrical Engineering, Electronic Materials +14