T. Grabolla - Concepedia

Author

T. Grabolla

Leibniz Institute for High Performance Microelectronics

Also Known As

T Grabolla, T. Grabolla, Th. Grabolla

Publications

Citations

H-Index

Concepts

All Affiliations

Leibniz Institute for High Performance Microelectronics Institut für Solartechnologien (Germany)Universität der Bundeswehr München Ruhr University Bochum Forschungszentrum Jülich

About

T. Grabolla is an author at Leibniz Institute for High Performance Microelectronics specializing in engineering, microelectronics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	19	826
2	Electrical Engineering	14	16	778
3	Applied Physics	11	12	384
4	Computer Engineering	8	8	466
5	Chemistry	1	1	17

T. Grabolla

Publications

947

Citations

H-Index

Page 1

	Year	Citations
SiGe HBT technology with f<inf>T</inf>/f<inf>max</inf> of 300GHz/500GHz and 2.0 ps CML gate delay B. Heinemann, R. Barth, D. Bolze, Low-power ElectronicsElectrical EngineeringEngineeringVlsi DesignHigh-speed Electronics	2010	163
SiGe HBT with fx/fmax of 505 GHz/720 GHz B. Heinemann, H. Rücker, R. Barth, Electrical EngineeringSige HbtEngineeringVlsi DesignMillimeter Wave Technology	2016	147
Novel collector design for high-speed SiGe:C HBTs B. Heinemann, H. Rücker, R. Barth, Electrical EngineeringEngineeringVlsi DesignHigh-frequency SigeHigh-frequency Device	2003	107
A 0.13&#x00B5;m SiGe BiCMOS technology featuring f<inf>T</inf>/f<inf>max</inf> of 240/330 GHz and gate delays below 3 ps H. Rücker, B. Heinemann, Wolfgang Winkler, Oscillator Gate DelaysEngineeringVlsi DesignMicrowave TransmissionSige Bicmos Technology	2009	65
Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene Rasuole Lukose, Marco Lisker, Fatima Akhtar, Scientific Reports	2021	61
A low-parasitic collector construction for high-speed SiGe:C HBTs B. Heinemann, R. Barth, D. Bolze, Low-parasitic Collector ConstructionElectrical EngineeringEngineeringRf SemiconductorHigh-frequency Device	2005	44
A flexible, low-cost, high performance SiGe:C BiCMOS process with a one-mask HBT module D. Knoll, K.‐E. Ehwald, B. Heinemann, Electrical EngineeringHbt DevicesEngineeringVlsi DesignDevice Integration	2003	41
Vertical MOS technology with sub-0.1 µm channellengths F. Wittmann, I. Eisele, T. Grabolla, Electronics Letters	1995	34
Monolithically Integrated 25Gbit/sec Receiver for 1.55μm in Photonic BiCMOS Technology D. Knoll, Stefan Lischke, Lars Zimmermann, Optical Fiber Communication Conference PhotonicsElectrical EngineeringEngineeringDevice IntegrationIntegrated Photonics	2014	33
Modular integration of high-performance SiGe:C HBTs in a deep submicron, epi-free CMOS process K.‐E. Ehwald, D. Knolll, B. Heinemann, Electrical EngineeringHigh-performance SigeModular IntegrationVlsi DesignEngineering	2003	28

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