J. Drews

SiGe HBT technology with f<inf>T</inf>/f<inf>max</inf> of 300GHz/500GHz and 2.0 ps CML gate delay

B. Heinemann, R. Barth, D. Bolze et al. · 2010 · 163 citations

Low-power Electronics, Electrical Engineering, Engineering +12

A 0.13 $\mu{\hbox {m}}$ SiGe BiCMOS Technology Featuring f$_{T} $/f$_{\max}$ of 240/330 GHz and Gate Delays Below 3 ps

H. Rücker, B. Heinemann, Wolfgang Winkler et al. · IEEE Journal of Solid-State Circuits · 2010 · 148 citations

Engineering, Vlsi Design, Radio Frequency +16

SiGe HBT with fx/fmax of 505 GHz/720 GHz

B. Heinemann, H. Rücker, R. Barth et al. · 2016 · 147 citations

Electrical Engineering, Sige Hbt, Engineering +13

Novel collector design for high-speed SiGe:C HBTs

B. Heinemann, H. Rücker, R. Barth et al. · 2003 · 107 citations

Electrical Engineering, Engineering, Vlsi Design +8

A 0.13µm SiGe BiCMOS technology featuring f<inf>T</inf>/f<inf>max</inf> of 240/330 GHz and gate delays below 3 ps

H. Rücker, B. Heinemann, Wolfgang Winkler et al. · 2009 · 65 citations

Oscillator Gate Delays, Engineering, Vlsi Design +16