J. Drews

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Publications

Citations

1.2K

H-Index

Active since

2001

Affiliations

Leibniz Institute for High Performance Microelectronics(Current)

Institut für Solartechnologien (Germany)

Fraunhofer Institute for Reliability and Microintegration

Silicon Radar (Germany)

Universität Ulm

J. Drews is an author at Leibniz Institute for High Performance Microelectronics specializing in engineering, microelectronics, and electrical engineering.

Publications per year

2001–2018

Publications

SiGe HBT technology with f<inf>T</inf>/f<inf>max</inf> of 300GHz/500GHz and 2.0 ps CML gate delay

B. Heinemann, R. Barth, D. Bolze et al. · 2010 · 164 citations

Engineering, Electrical Engineering, Microelectronics +9

SiGe HBT with fx/fmax of 505 GHz/720 GHz

B. Heinemann, H. Rücker, R. Barth et al. · 2016 · 149 citations

Engineering, Electrical Engineering, Materials Science +17

A 0.13 $\mu{\hbox {m}}$ SiGe BiCMOS Technology Featuring f$_{T} $/f$_{\max}$ of 240/330 GHz and Gate Delays Below 3 ps

H. Rücker, B. Heinemann, Wolfgang Winkler et al. · IEEE Journal of Solid-State Circuits · 2010 · 148 citations

Engineering, Electrical Engineering, Microelectronics +13

Novel collector design for high-speed SiGe:C HBTs

B. Heinemann, H. Rücker, R. Barth et al. · 2003 · 107 citations

Engineering, Electrical Engineering, Electronic Materials +16

A 0.13&#x00B5;m SiGe BiCMOS technology featuring f<inf>T</inf>/f<inf>max</inf> of 240/330 GHz and gate delays below 3 ps

H. Rücker, B. Heinemann, Wolfgang Winkler et al. · 2009 · 65 citations

Engineering, Electrical Engineering, Microelectronics +13

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