A. Fox - Concepedia

Author

A. Fox

Leibniz Institute for High Performance Microelectronics ORCID

Also Known As

A Fox, A J Fox, A. Fox, A. J. FOX, A. J. Fox, A.J. Fox, Alexander Fox, Fox, Alexander

Publications

1.7K

Citations

H-Index

Concepts

All Affiliations

Leibniz Institute for High Performance Microelectronics Institut für Solartechnologien (Germany)Technische Universität Berlin Infineon Technologies (Germany)IMEC

About

A. Fox is an author at Leibniz Institute for High Performance Microelectronics specializing in engineering, microelectronics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	23	1.6K
2	Computer Engineering	14	14	913
3	Applied Physics	11	12	771
4	Education	1	1	148
5	Chemical Engineering	1	1	31

A. Fox

Publications

1.6K

Citations

H-Index

Page 1

	Year	Citations
Half-Terahertz SiGe BiCMOS technology H. Rücker, B. Heinemann, A. Fox Low-power ElectronicsElectrical EngineeringTerahertz TechnologyEngineeringHigh-speed Electronics	2012	216
SiGe HBT technology with f<inf>T</inf>/f<inf>max</inf> of 300GHz/500GHz and 2.0 ps CML gate delay B. Heinemann, R. Barth, D. Bolze, Low-power ElectronicsElectrical EngineeringEngineeringVlsi DesignHigh-speed Electronics	2010	163
SiGe HBT and BiCMOS process integration optimization within the DOTSEVEN project J. Böck, Klaus Aufinger, S. Boguth, Electrical EngineeringSige Hbt ModuleEngineeringRadio FrequencyMillimeter Wave Technology	2015	161
A 0.13 $\mu{\hbox {m}}$ SiGe BiCMOS Technology Featuring f$_{T} $/f$_{\max}$ of 240/330 GHz and Gate Delays Below 3 ps H. Rücker, B. Heinemann, Wolfgang Winkler, IEEE Journal of Solid-State Circuits EngineeringVlsi DesignRadio FrequencyMicrowave TransmissionEducation	2010	148
SiGe HBT with fx/fmax of 505 GHz/720 GHz B. Heinemann, H. Rücker, R. Barth, Electrical EngineeringSige HbtEngineeringVlsi DesignMillimeter Wave Technology	2016	147
Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications Ch. Walczyk, Christian Wenger, Rakesh Sohal, Journal of Applied Physics SemiconductorsMaterials ScienceElectrical EngineeringElectronic DevicesConduction Process	2009	105
Towards THz SiGe HBTs P. Chevalier, T.F. Meister, B. Heinemann, Thz PhotonicsIndustrial DesignEngineeringEuropean Project DotfiveIndustrial Engineering	2011	95
A 0.13&#x00B5;m SiGe BiCMOS technology featuring f<inf>T</inf>/f<inf>max</inf> of 240/330 GHz and gate delays below 3 ps H. Rücker, B. Heinemann, Wolfgang Winkler, Oscillator Gate DelaysEngineeringVlsi DesignMicrowave TransmissionSige Bicmos Technology	2009	65
Impact of Intercell and Intracell Variability on Forming and Switching Parameters in RRAM Arrays Alessandro Grossi, Damian Walczyk, Cristian Zambelli, IEEE Transactions on Electron Devices EngineeringPulse FormingIntegrated CircuitsPhase Change MemoryInitial State	2015	59
On the role of Ti adlayers for resistive switching in HfO2-based metal-insulator-metal structures: Top versus bottom electrode integration Ch. Walczyk, Christian Wenger, Damian Walczyk, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena EngineeringTi Top AdlayerTi Bottom AdlayerPhase Change MemoryTi Adlayers	2011	43

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