Impact of Defect Distribution on Resistive Switching Characteristics of Sr₂TiO₄ Thin Films

Abstract

The resistive switching properties of Sr2TiO4 thin films with specific defect distribution have been studied. Junctions of Sr2TiO4 thin films containing a high density of defects show well-pronounced resistive switching properties while those with well-ordered microstructure exhibited insignificant hysteresis windows. This work clearly demonstrates the crucial role of defects for the microscopic switching mechanisms in oxide thin films. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.