Electronics Letters · 2003 · 43 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationHigh-frequency Semiconductor DevicesIii-v SemiconductorsSemiconductor Device MaterialsSemiconductor PhysicsWide Band Gap SemiconductorsAluminum Gallium NitrideGallium NitrideGallium Nitride (Gan) MaterialsGallium Nitride Power DevicesGan-based High-frequency DevicesPower OutputPower Output MeasurementWide Bandgap Semiconductor Applications
The electrical performances of high current density AlGaN/GaN HEMTs are reported. 2×75 µm×0.7 µm devices grown on sapphire substrate showed current densities up to 2.1 A/mm under 200 ns pulse condition. RF power measurements at 8 GHz and VDS=15 V exhibited a saturated output power of 3.66 W/mm with a 47.8% peak PAE.
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