Enhanced Diffusion in Silicon Processing

Point defects and dopant diffusion in silicon

P. Fahey, Peter B. Griffin, J.D. Plummer · Reviews of Modern Physics · 1989 · 1.4K citations

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Implantation and transient B diffusion in Si: The source of the interstitials

D. J. Eaglesham, P.A. Stolk, H.-J. Gossmann et al. · Applied Physics Letters · 1994 · 541 citations

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Formation of stacking faults and enhanced diffusion in the oxidation of silicon

S. M. Hu · Journal of Applied Physics · 1974 · 435 citations

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Transient Phosphorus Diffusion Below the Amorphization Threshold

M.D. Giles · Journal of The Electrochemical Society · 1991 · 322 citations

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Energetics of Self-Interstitial Clusters in Si

N. E. B. Cowern, Giovanni Mannino, P.A. Stolk et al. · Physical Review Letters · 1999 · 313 citations

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