Diffusion Profiles
Diffusion Profiles is a quantitative characterization method in materials science that describes the spatial distribution of dopant concentrations across a thin film as a function of depth, enabling the analysis of diffusion dynamics during semiconductor fabrication.
1.3K
Publications
55.7K
Citations
4K
Authors
1K
Institutions
Publications per year
2017–2026
107
Parents
1.3K
1–5 of 1.3K
4K
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Centre National de la Recherche Scientifique
Paris, France
27 h-index
164 publications
6.3K citations
Stanford University
Stanford, United States
23 h-index
100 publications
5.4K citations
University of Münster
Münster, Germany
21 h-index
94 publications
5.3K citations
IBM (United States)
Armonk, United States
15 h-index
48 publications
2.2K citations
Philips (Netherlands)
Amsterdam, The Netherlands
14 h-index
63 publications
2.3K citations
University of Illinois Urbana-Champaign
Urbana, United States
14 h-index
56 publications
1.5K citations
University of Florida
Gainesville, United States
14 h-index
57 publications
1.9K citations
IBM Research - Thomas J. Watson Research Center
Yorktown Heights, United States
13 h-index
42 publications
1.4K citations
1–8 of 1K
182 publications · 8K citations
50
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129 publications · 5.1K citations
42
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JES · 75 publications · 2.7K citations
29
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JJAP · 41 publications · 1.2K citations
19
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24 publications · 894 citations
18
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