Diffusion Profiles

Diffusion Profiles is a quantitative characterization method in materials science that describes the spatial distribution of dopant concentrations across a thin film as a function of depth, enabling the analysis of diffusion dynamics during semiconductor fabrication.

1.3K

Publications

55.7K

Citations

4K

Authors

1K

Institutions

Publications per year

2017–2026

107

Authors

4K

  1. NA
    N. A. Stolwijk

    University of Münster, Germany

    16 publications · 690 citations

    14

    h-index

  2. HB
    H. Bracht

    University of Münster, Germany

    14 publications · 857 citations

    14

    h-index

  3. MU
    Masashi Uematsu

    NTT Basic Research Laboratories, Japan

    12 publications · 478 citations

    11

    h-index

  4. JP
    J.D. Plummer

    Stanford University, United States

    12 publications · 610 citations

    11

    h-index

  5. PB
    Peter B. Griffin

    Stanford University, United States

    10 publications · 633 citations

    10

    h-index

1–5 of 4K

Venues

  1. Journal of Applied Physics

    182 publications · 8K citations

    50

    h-index

  2. Applied Physics Letters

    129 publications · 5.1K citations

    42

    h-index

  3. Journal of The Electrochemical Society

    JES · 75 publications · 2.7K citations

    29

    h-index

  4. Japanese Journal of Applied Physics

    JJAP · 41 publications · 1.2K citations

    19

    h-index

  5. The Journal of Physical Chemistry

    24 publications · 894 citations

    18

    h-index

1–5