H. Bracht - Concepedia

Author

H. Bracht

University of Münster ORCID

Also Known As

Bracht, H., Bracht, Hartmut, H Bracht, H. Bracht, Hartmut A. Bracht, Hartmut Bracht

207

Publications

5.3K

Citations

H-Index

Concepts

All Affiliations

University of Münster Lawrence Berkeley National Laboratory Imperial College London Aarhus University Helmholtz-Zentrum Dresden-Rossendorf

About

H. Bracht is an author at University of Münster specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	33	79	3.8K
2	Applied Physics	33	82	4K
3	Chemistry	22	30	1.6K
4	Natural Sciences	19	23	1.4K
5	Chemical Engineering	4	4	143

H. Bracht

101

Publications

4.8K

Citations

H-Index

Page 1

	Year	Citations
Silicon Self-Diffusion in Isotope Heterostructures H. Bracht, E. E. Häller, R. Clark-Phelps Physical Review Letters Materials ScienceSemiconductorsEngineeringPhysicsIntrinsic Impurity	1998	310
Properties of intrinsic point defects in silicon determined by zinc diffusion experiments under nonequilibrium conditions H. Bracht, N. A. Stolwijk, H. Mehrer Physical review. B, Condensed matter Materials ScienceSemiconductorsZinc Diffusion ExperimentsEngineeringDislocation Interaction	1995	305
Intrinsic and extrinsic diffusion of phosphorus, arsenic, and antimony in germanium S. Brotzmann, H. Bracht Journal of Applied Physics Rare Earth MineralEngineeringExtrinsic DiffusionActive DopantsChemistry	2008	213
Diffusion of<i>n</i>-type dopants in germanium A. Chroneos, H. Bracht Applied Physics Reviews	2014	180
Vacancy-mediated dopant diffusion activation enthalpies for germanium A. Chroneos, H. Bracht, Robin W. Grimes, Applied Physics Letters Impurity AtomsEngineeringDiffusion ResistancePhysicsNatural Sciences	2008	140
Diffusion and defect reactions between donors, C, and vacancies in Ge. I. Experimental results S. Brotzmann, H. Bracht, J. Lundsgaard Hansen, Physical Review B EngineeringDefect ReactionsChemistryDefect ToleranceCharge Carrier Transport	2008	122
Self- and foreign-atom diffusion in semiconductor isotope heterostructures. II. Experimental results for silicon H. Bracht, Hughes H. Silvestri, Ian D. Sharp, Physical Review B EngineeringForeign-atom DiffusionSilicon On InsulatorDefect ToleranceBand Gap	2007	118
Self-diffusion in germanium isotope multilayers at low temperatures Erwin Hüger, U. Tietze, D. Lott, Applied Physics Letters Materials ScienceSemiconductorsEngineeringGe Self-diffusionPhysics	2008	111
Diffusion Mechanisms and Intrinsic Point-Defect Properties in Silicon H. Bracht MRS Bulletin Diffusion MechanismsPhysicsIntrinsic ImpurityApplied PhysicsDefect Formation	2000	110
Large disparity between gallium and antimony self-diffusion in gallium antimonide H. Bracht, Samuel P. Nicols, W. Walukiewicz, Nature EngineeringPhysicsGallium AntimonideNatural SciencesApplied Physics	2000	102

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