Masashi Uematsu

Universal Theory of Si Oxidation Rate and Importance of Interfacial Si Emission

Hiroyuki Kageshima, Kenji Shiraishi, Masashi Uematsu · Japanese Journal of Applied Physics · 1999 · 157 citations

Materials Science, Electrical Engineering, Universal Theory +15

Simulation of boron, phosphorus, and arsenic diffusion in silicon based on an integrated diffusion model, and the anomalous phosphorus diffusion mechanism

Masashi Uematsu · Journal of Applied Physics · 1997 · 114 citations

Point Defects, Engineering, Chemistry +21

Experimental Evidence of the Vacancy-Mediated Silicon Self-Diffusion in Single-Crystalline Silicon

Yasuo Shimizu, Masashi Uematsu, Kohei M. Itoh · Physical Review Letters · 2007 · 93 citations

Materials Science, Diffusion Mechanisms, Engineering +13

Self-diffusion of Si in thermally grown SiO2 under equilibrium conditions

Tomonori Takahashi, Shigeto Fukatsu, Kohei M. Itoh et al. · Journal of Applied Physics · 2003 · 76 citations

Materials Science, Equilibrium Conditions, Engineering +10

Recombination-enhanced impurity diffusion in Be-doped GaAs

Masashi Uematsu, Kazumi Wada · Applied Physics Letters · 1991 · 75 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11