Journal of Applied Physics · 1992 · 14 citations · 6 references
EngineeringElectrical EngineeringPhysicsMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDopingIii-v SemiconductorsMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsCarrier ConfinementDoping Effects On Device PerformanceHall ConductivityHall EffectHigh-electron-mobility TransistorsModulation DopingMolecular Beam EpitaxyThreshold Voltage
A standard Ga0.51In0.49P/GaAs modulation-doped field-effect transistor (MODFET) structure and a novel Ga0.51In0.49P/GaAs MODFET structure where the Ga0.51In0.49P spacer layer was replaced by an undoped Al0.3Ga0.7As layer were grown using a gas source molecular beam epitaxy. The Hall mobility of the novel MODFET’s structures are 6600 and 36 400 cm2/V s at room temperature and 77 K, respectively, which are more than twice as high as that in the ordinary Ga0.51In0.49P/GaAs MODFETs structure. The mobility is attributed to better carrier confinement and smoother heterointerface. Furthermore, it is found that both ordinary and novel MODFET’s structures have small photo-persistant conductivity effects at low temperatures and that the FETs made in these materials had no threshold voltage shift at low temperatures after illumination.
6
Band offset of GaAs/In0.48Ga0.52P measured under hydrostatic pressure
Jianhui Chen, J. R. Sites, Ian L. Spain et al. · Applied Physics Letters · 1991 · 112 citations