Band offset of GaAs/In0.48Ga0.52P measured under hydrostatic pressure

Abstract

Low-temperature photoluminescence spectra of an In0.48Ga0.52P alloy and a p-type GaAs/In0.48Ga0.52P multiple quantum well, both grown by molecular beam epitaxy, have been obtained under hydrostatic pressures from 0 to 6 GPa. The zero-pressure extrapolation of the InGaP(X) to GaAs(Γ) transitions yields a 0.40±0.02 valence-band offset, and hence only a small, 0.06 ± 0.02 eV, conduction-band offset. These offset values are in agreement with measured values of the confinement energy versus well width.