M. J. Hafich - Concepedia

Author

M. J. Hafich

Colorado State University

Also Known As

Hafich, M. J., M J Hafich, M. Hafich, M. J. HAFICH, M. J. Hafich, M.J. Hafich, Michael Hafich, Michael J. Hafich

160

Publications

1.5K

Citations

H-Index

Concepts

All Affiliations

Colorado State University Sandia National Laboratories Sandia National Laboratories California University of California, Santa Barbara Purdue University West Lafayette

About

M. J. Hafich is an author at Colorado State University specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	38	1.2K
2	Applied Physics	19	34	1.1K
3	Chemical Engineering	1	1	28
4	Chemistry	1	1	15
5	Computer Engineering	1	1	12

M. J. Hafich

Publications

1.2K

Citations

H-Index

Page 1

	Year	Citations
Band offset of GaAs/In0.48Ga0.52P measured under hydrostatic pressure Jianhui Chen, J. R. Sites, Ian L. Spain, Applied Physics Letters Materials ScienceSemiconductorsWide-bandgap SemiconductorPhotoluminescenceEngineering	1991	112
Optical properties of GaAs on (100) Si using molecular beam epitaxy W. T. Masselink, T. Henderson, John F. Klem, Applied Physics Letters SemiconductorsMaterials ScienceElectrical EngineeringOptical MaterialsEngineering	1984	94
Internal photoemission and energy-band offsets in GaAs-GaInP <i>p-I-N</i> heterojunction photodiodes M. A. Haase, M. J. Hafich, G. Y. Robinson Applied Physics Letters SemiconductorsPhotonicsElectrical EngineeringElectronic DevicesEngineering	1991	76
High quality quantum wells of InGaP/GaAs grown by molecular beam epitaxy M. J. Hafich, J. H. Quigley, R. E. Owens, Applied Physics Letters Optical MaterialsEngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductors	1989	66
Wet oxidation of AlxGa1−xAs: Temporal evolution of composition and microstructure and the implications for metal-insulator-semiconductor applications Carol I. H. Ashby, John P. Sullivan, P.P. Newcomer, Applied Physics Letters Aluminium NitrideWide-bandgap SemiconductorAlxga1−xas AlloyEngineeringOxidation Resistance	1997	56
Growth of InGaP on GaAs using gas-source molecular-beam epitaxy J. H. Quigley, M. J. Hafich, H. Y. Lee, Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena Materials ScienceSemiconductorsElectrical EngineeringEngineeringCrystalline Defects	1989	54
Integrated optical inverter using light amplifying optical switch (LAOS) Feng Jun, S.A. Feld, X. An, Electronics Letters PhotonicsElectrical EngineeringOptical InverterCompact IntegrationEngineering	1991	53
Planar quantum transistor based on 2D–2D tunneling in double quantum well heterostructures J. A. Simmons, M. A. Blount, J. S. Moon, Journal of Applied Physics Categoryquantum ElectronicsEngineeringQuantum EngineeringSemiconductor DeviceSemiconductors	1998	47
Growth of InP on Si substrates by molecular beam epitaxy T. E. Crumbaker, H. Y. Lee, M. J. Hafich, Applied Physics Letters Materials ScienceSemiconductorsInp FilmsIi-vi SemiconductorEngineering	1989	46
Ultrafast graded double-heterostructure GaInAs/InP photodiode Y. G. Wey, D. L. Crawford, K. Giboney, Applied Physics Letters Wide-bandgap SemiconductorOptical MaterialsEngineeringOptoelectronic DevicesOptical Amplifier	1991	43

Page 1