M. J. Hafich

Band offset of GaAs/In0.48Ga0.52P measured under hydrostatic pressure

Jianhui Chen, J. R. Sites, Ian L. Spain et al. · Applied Physics Letters · 1991 · 112 citations

Materials Science, Semiconductors, Wide-bandgap Semiconductor +15

Optical properties of GaAs on (100) Si using molecular beam epitaxy

W. T. Masselink, T. Henderson, John F. Klem et al. · Applied Physics Letters · 1984 · 94 citations

Semiconductors, Materials Science, Electrical Engineering +12

Internal photoemission and energy-band offsets in GaAs-GaInP <i>p-I-N</i> heterojunction photodiodes

M. A. Haase, M. J. Hafich, G. Y. Robinson · Applied Physics Letters · 1991 · 76 citations

Semiconductors, Photonics, Electrical Engineering +15

High quality quantum wells of InGaP/GaAs grown by molecular beam epitaxy

M. J. Hafich, J. H. Quigley, R. E. Owens et al. · Applied Physics Letters · 1989 · 66 citations

Optical Materials, Engineering, Optoelectronic Devices +16

Wet oxidation of AlxGa1−xAs: Temporal evolution of composition and microstructure and the implications for metal-insulator-semiconductor applications

Carol I. H. Ashby, John P. Sullivan, P.P. Newcomer et al. · Applied Physics Letters · 1997 · 56 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Alxga1−xas Alloy +16