Applied Physics Letters · 1989 · 66 citations · 14 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsOptical Properties Of SemiconductorsQuantum ConfinementQuantum WellsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsMolecular Beam EpitaxyPhotoluminescencePhotoluminescence In Quantum WellsQuantum Confinement EffectsQuantum Well GrowthQuantum Well Growth TechniquesQuantum Well HeterostructuresQuantum Well Structures
High quality quantum wells of GaAs confined by barriers of InGaP have been grown by gas-source molecular beam epitaxy. High-resolution lattice images obtained with transmission electron microscopy of single quantum wells reveal high quality interfaces for both the normal InGaP/GaAs and the inverted GaAs/InGaP interface. Multiple-line low-temperature photoluminescence emission is observed for the thinnest GaAs quantum well. The range of well thicknesses examined was 0.6–5.2 nm, with the smallest well producing a quantum confinement energy shift of over 410 meV, corresponding to photoluminescence emission at 640 nm (1.94 eV) from GaAs.
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