Internal photoemission and energy-band offsets in GaAs-GaInP <i>p-I-N</i> heterojunction photodiodes

Abstract

Internal photoemission has been observed in GaAs-Ga0.52In0.48P p-I-N heterojunction photodiodes grown by gas source molecular beam epitaxy. Threshold energies associated with this photocurrent mechanism have been accurately measured. Simple analysis provides a precise determination of the energy-band discontinuities in this heterostructure material system. The results indicate a conduction-band discontinuity of ΔEc=108±6 meV at room temperature.