Y.-J. Chan

Ga/sub 0.51/In/sub 0.49/P/GaAs HEMT's exhibiting good electrical performance at cryogenic temperatures

Y.-J. Chan, D. Pavlidis, Manijeh Razeghi et al. · IEEE Transactions on Electron Devices · 1990 · 92 citations

Semiconductors, Threshold Voltage Shift, Electrical Engineering +12

High-performance evanescently edge coupled photodiodes with partially p-doped photoabsorption layer at 1.55-/spl mu/m wavelength

Y.-S. Wu, J.-W. Shi, Jia Wu et al. · IEEE Photonics Technology Letters · 2005 · 68 citations

1.55-/Spl Mu/m Wavelength, Optical Materials, Engineering +18

20 GHz CMOS injection-locked frequency divider with variable division ratio

F.-H. Huang, D.M. Lin, H.P. Wang et al. · 2005 · 35 citations

Radio Frequency, High-frequency Device, Mixed-signal Integrated Circuit +4

Low Damage,>tex<$hbox Cl_2$>/tex<-Based Gate Recess Etching for 0.3->tex<$muhbox m$>/tex<Gate-Length AlGaN/GaN HEMT Fabrication

W.-K. Wang, Yong Li, Chun-Hsiung Lin et al. · IEEE Electron Device Letters · 2004 · 34 citations

Wide-bandgap Semiconductor, Engineering, Residual Surface Damage +17

Study of the consequence of excess indium in the active channel of InGaAs/InAlAs high electron mobility transistors on device properties

Geok Ing Ng, D. Pavlidis, M. Quillec et al. · Applied Physics Letters · 1988 · 26 citations · Full text

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +13