Y.-J. Chan - Concepedia

Author

Y.-J. Chan

National Central University

Also Known As

Y J Chan, Y. Chan, Y. J. Chan, Y.-J Chan, Y.-J. Chan, Y.J Chan, Y.J. Chan, Y.j. Chan, Yi-Cheng Chan

Publications

536

Citations

H-Index

Concepts

All Affiliations

National Central University University of Michigan Technicolor (France)

About

Y.-J. Chan is an author at National Central University specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	13	372
2	Electrical Engineering	11	12	357
3	Applied Physics	10	11	335
4	Computer Engineering	2	2	37
5	Chemistry	1	1	15

Y.-J. Chan

Publications

417

Citations

H-Index

Page 1

	Year	Citations
Ga/sub 0.51/In/sub 0.49/P/GaAs HEMT's exhibiting good electrical performance at cryogenic temperatures Y.-J. Chan, D. Pavlidis, Manijeh Razeghi, IEEE Transactions on Electron Devices SemiconductorsThreshold Voltage ShiftElectrical EngineeringSemiconductor TechnologyCryogenic Temperatures	1990	92
High-performance evanescently edge coupled photodiodes with partially p-doped photoabsorption layer at 1.55-/spl mu/m wavelength Y.-S. Wu, J.-W. Shi, Jia Wu, IEEE Photonics Technology Letters 1.55-/Spl Mu/m WavelengthOptical MaterialsEngineeringOptoelectronic DevicesPhotoelectric Sensor	2005	68
20 GHz CMOS injection-locked frequency divider with variable division ratio F.-H. Huang, D.M. Lin, H.P. Wang, Radio FrequencyHigh-frequency DeviceMixed-signal Integrated CircuitVariable Division RatioInjection-locked Frequency Divider	2005	35
Low Damage,&gt;tex&lt;$hbox Cl_2$&gt;/tex&lt;-Based Gate Recess Etching for 0.3-&gt;tex&lt;$muhbox m$&gt;/tex&lt;Gate-Length AlGaN/GaN HEMT Fabrication W.-K. Wang, Yong Li, Chun-Hsiung Lin, IEEE Electron Device Letters Wide-bandgap SemiconductorEngineeringResidual Surface DamageHbox Cl_2Low Damage	2004	34
Study of the consequence of excess indium in the active channel of InGaAs/InAlAs high electron mobility transistors on device properties Geok Ing Ng, D. Pavlidis, M. Quillec, Applied Physics Letters Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringActive ChannelTransconductance Enhancement	1988	26
Ga<sub>0.51</sub>In<sub>0.49</sub>P/Ga<sub>x</sub>In<sub>1-x</sub>As lattice-matched (x=1) and strained (x=0.85) two-dimensional electron gas field-effect transistors Manijeh Razeghi, F. Omnès, P. Maurel, Semiconductor Science and Technology SemiconductorsSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineering	1991	25
0.13-&lt;tex&gt;$muhbox m$&lt;/tex&gt;RF CMOS and Varactors Performance Optimization by Multiple Gate Layouts Chih-Chao Ho, Chang-Hsin Kuo, Y.-J. Chan, IEEE Transactions on Electron Devices Low-power ElectronicsElectrical EngineeringCmos DevicesEngineeringVlsi Design	2004	24
The first fabrication of n- and p-type Ga<sub>0.49</sub>In<sub>0.51</sub>P/Ga(In)As lattice matched and strained HIGFET structures grown by MOCVD Manijeh Razeghi, F. Omnès, M. Defour, Semiconductor Science and Technology Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringP-type Lattice	1990	18
Low-&lt;tex&gt;$kappa$&lt;/tex&gt;BCB Passivation on AlGaN–GaN HEMT Fabrication W.-K. Wang, Ching Hsuan Lin, Po‐Shen Lin, IEEE Electron Device Letters Gan Hemts FabricationElectrical EngineeringEngineeringGan HemtsPhysics	2004	17
Single and dual p-doped channel In/sub 0.52/Al/sub 0.48/ As/In/sub x/Ga/sub 1-x/As (x=0.53, 0.65) FET's and the role of doping Y.-J. Chan, D. Pavlidis IEEE Transactions on Electron Devices Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringPhysics	1992	16

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