Recent advances on dielectrics technology for SiC and GaN power devices

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

O. Ambacher, J. Smart, J. R. Shealy et al. · Journal of Applied Physics · 1999 · 2.9K citations

Engineering, Materials Engineering, Materials Science +17

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

O. Ambacher, B. E. Foutz, J. Smart et al. · Journal of Applied Physics · 2000 · 1.7K citations

Engineering, Materials Science, Physics +17

The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

R. Vetury, N.Q. Zhang, S. Keller et al. · IEEE Transactions on Electron Devices · 2001 · 1.4K citations

Engineering, Electrical Engineering, Materials Science +17

Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

J. P. Ibbetson, P. Fini, K. D. Ness et al. · Applied Physics Letters · 2000 · 1.1K citations

Engineering, Electrical Engineering, Materials Science +17

30-W/mm GaN HEMTs by Field Plate Optimization

Yifeng Wu, A. Saxler, M. Moore et al. · IEEE Electron Device Letters · 2004 · 1.1K citations

Engineering, Electrical Engineering, Materials Science +17