Patrick Fiorenza

Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

Fabrizio Roccaforte, Patrick Fiorenza, Giuseppe Greco et al. · Microelectronic Engineering · 2017 · 568 citations

Engineering, Electrical Engineering, Materials Science +14

Recent advances on dielectrics technology for SiC and GaN power devices

Fabrizio Roccaforte, Patrick Fiorenza, Giuseppe Greco et al. · Applied Surface Science · 2014 · 170 citations

Engineering, Electrical Engineering, Materials Science +16

Challenges for energy efficient wide band gap semiconductor power devices

Fabrizio Roccaforte, Patrick Fiorenza, Giuseppe Greco et al. · physica status solidi (a) · 2014 · 141 citations

Engineering, Electrical Engineering, Materials Science +17

SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3

Patrick Fiorenza, Filippo Giannazzo, Marilena Vivona et al. · Applied Physics Letters · 2013 · 82 citations

Engineering, Materials Engineering, Materials Science +17

Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors

Alessia Frazzetto, Filippo Giannazzo, Patrick Fiorenza et al. · Applied Physics Letters · 2011 · 67 citations · Full text

Engineering, Electrical Engineering, Materials Science +17