Alessia Frazzetto

Structural and transport properties in alloyed Ti/Al Ohmic contacts formed on p-type Al-implanted 4H-SiC annealed at high temperature

Alessia Frazzetto, Filippo Giannazzo, Raffaella Lo Nigro et al. · Journal of Physics D Applied Physics · 2011 · 69 citations · Full text

Aluminium Nitride, Engineering, Semiconductor Device +16

Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors

Alessia Frazzetto, Filippo Giannazzo, Patrick Fiorenza et al. · Applied Physics Letters · 2011 · 67 citations · Full text

Semiconductor Technology, Electrical Engineering, Inversion Channel Mobility +9

Critical issues for interfaces to p-type SiC and GaN in power devices

Fabrizio Roccaforte, Alessia Frazzetto, Giuseppe Greco et al. · Applied Surface Science · 2012 · 63 citations

Electrical Engineering, Critical Issues, Engineering +7

Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors

Patrick Fiorenza, Alessia Frazzetto, A. Guarnera et al. · Applied Physics Letters · 2014 · 56 citations

Trapping Effects, Electrical Engineering, Engineering +14

Correlating macroscopic and nanoscale electrical modifications of SiO2/4H-SiC interfaces upon post-oxidation-annealing in N2O and POCl3

Lukas K. Swanson, Patrick Fiorenza, Filippo Giannazzo et al. · Applied Physics Letters · 2012 · 52 citations

Materials Science, Materials Engineering, Electrical Engineering +15