Alessia Frazzetto - Concepedia

Author

Alessia Frazzetto

Institute for Microelectronics and Microsystems

Also Known As

A Frazzetto, A. Frazzetto, Alessia Frazzetto, Alessia M. Frazzetto

Publications

496

Citations

H-Index

Concepts

All Affiliations

Institute for Microelectronics and Microsystems STMicroelectronics (Italy)University of Catania

About

Alessia Frazzetto is an author at Institute for Microelectronics and Microsystems specializing in applied physics, electrical engineering, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	12	449
2	Applied Physics	11	12	449
3	Electrical Engineering	11	12	449
4	Materials Science	7	7	211
5	Materials Engineering	5	5	188

Alessia Frazzetto

Publications

476

Citations

H-Index

Page 1

	Year	Citations
Structural and transport properties in alloyed Ti/Al Ohmic contacts formed on p-type Al-implanted 4H-SiC annealed at high temperature Alessia Frazzetto, Filippo Giannazzo, Raffaella Lo Nigro, Journal of Physics D Applied Physics Aluminium NitrideEngineeringSemiconductor DeviceSemiconductorsBarrier Height	2011	69
Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors Alessia Frazzetto, Filippo Giannazzo, Patrick Fiorenza, Applied Physics Letters Semiconductor TechnologyElectrical EngineeringInversion Channel MobilityEngineeringBias Temperature Instability	2011	67
Critical issues for interfaces to p-type SiC and GaN in power devices Fabrizio Roccaforte, Alessia Frazzetto, Giuseppe Greco, Applied Surface Science Electrical EngineeringCritical IssuesEngineeringPower DevicePower Devices	2012	63
Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors Patrick Fiorenza, Alessia Frazzetto, A. Guarnera, Applied Physics Letters Trapping EffectsElectrical EngineeringEngineeringTunneling MicroscopyPhysics	2014	56
Correlating macroscopic and nanoscale electrical modifications of SiO2/4H-SiC interfaces upon post-oxidation-annealing in N2O and POCl3 Lukas K. Swanson, Patrick Fiorenza, Filippo Giannazzo, Applied Physics Letters Materials ScienceMaterials EngineeringElectrical EngineeringSemiconductor TechnologyEngineering	2012	52
Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2O and POCl3 Patrick Fiorenza, Lukas K. Swanson, Marilena Vivona, Applied Physics A Materials EngineeringElectrical Engineering4H-sic Lateral MosfetsGate OxideEngineering	2013	40
Influence of the surface morphology on the channel mobility of lateral implanted 4H-SiC(0001) metal-oxide-semiconductor field-effect transistors Patrick Fiorenza, Filippo Giannazzo, Alessia Frazzetto, Journal of Applied Physics Materials ScienceSemiconductorsElectrical EngineeringElectronic DevicesEngineering	2012	32
Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization Giuseppe Greco, Filippo Giannazzo, Alessia Frazzetto, Nanoscale Research Letters	2011	27
Ti/Al-based contacts to p-type SiC and GaN for power device applications Fabrizio Roccaforte, Marilena Vivona, Giuseppe Greco, physica status solidi (a) Wide-bandgap SemiconductorTi/al-based ContactsEngineeringPower ElectronicsP-type Sic	2016	20
A look underneath the SiO<sub>2</sub>/4H-SiC interface after N<sub>2</sub>O thermal treatments Patrick Fiorenza, Filippo Giannazzo, Lukas K. Swanson, Beilstein Journal of Nanotechnology Materials EngineeringSemiconductorsMaterials ScienceElectrical EngineeringEngineering	2013	15

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