Bipolar characteristics of AlGaN/AlN/GaN/AlGaN double heterojunction structure with AlGaN as buffer layer

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

O. Ambacher, J. Smart, J. R. Shealy et al. · Journal of Applied Physics · 1999 · 2.9K citations

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Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

O. Ambacher, Jacek A. Majewski, C. R. Miskys et al. · Journal of Physics Condensed Matter · 2002 · 1K citations

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Thermal conduction in AlxGa1−xN alloys and thin films

Weili Liu, Alexander A. Balandin · Journal of Applied Physics · 2005 · 259 citations

Natural Sciences, Materials Engineering, Materials Science +17

Punch-through in short-channel AlGaN/GaN HFETs

Michael J. Uren, K. J. Nash, R.S. Balmer et al. · IEEE Transactions on Electron Devices · 2006 · 220 citations

Engineering, Electrical Engineering, Materials Science +15

Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement

Eldad Bahat‐Treidel, Oliver Hilt, Frank Brunner et al. · IEEE Transactions on Electron Devices · 2008 · 145 citations

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