Enchao Peng

Growth and characterization of AlGaN/AlN/GaN/AlGaN double heterojunction structures with AlGaN as buffer layers

Enchao Peng, Xiaoliang Wang, Hongling Xiao et al. · Journal of Crystal Growth · 2013 · 21 citations

Materials Science, Materials Engineering, Wide-bandgap Semiconductor +7

Bipolar characteristics of AlGaN/AlN/GaN/AlGaN double heterojunction structure with AlGaN as buffer layer

Enchao Peng, Xiaoliang Wang, Hongling Xiao et al. · Journal of Alloys and Compounds · 2013 · 21 citations

Materials Engineering, Aluminium Nitride, Electrical Engineering +8

Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes

Kang He, Quan Wang, Hongling Xiao et al. · physica status solidi (a) · 2015 · 15 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9

Two-dimensional electron and hole gases in In<i>x</i>Ga1<i>−</i> <i>x</i>N/Al<i>y</i>Ga1<i>−</i> <i>y</i>N/GaN heterostructure for enhancement mode operation

Junda Yan, Xiaoliang Wang, Quan Wang et al. · Journal of Applied Physics · 2014 · 12 citations

Wide-bandgap Semiconductor, Engineering, Al Content +17