Enhancing semiconductor device performance using ordered dopant arrays

A silicon-based nuclear spin quantum computer

B. E. Kane · Nature · 1998 · 3.8K citations

Computing, Computer Science, Physics +12

Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's

Tomohisa Mizuno, J. Okumtura, Akira Toriumi · IEEE Transactions on Electron Devices · 1994 · 572 citations

Engineering, Computer Engineering, Electrical Engineering +16

The effect of randomness in the distribution of impurity atoms on FET thresholds

Robert W. Keyes · Applied Physics A · 1975 · 180 citations

Engineering, Electrical Engineering, Physics +12

Discrete random dopant distribution effects in nanometer-scale MOSFETs

H.‐S. Philip Wong, Yuan Taur, D.J. Frank · Microelectronics Reliability · 1998 · 81 citations

Engineering, Computer Engineering, Electrical Engineering +14

Improvement of Focused Ion-Beam Optics in Single-Ion Implantation for Higher Aiming Precision of One-by-One Doping of Impurity Atoms into Nano-Scale Semiconductor Devices

Takahiro Shinada, Hikaru Koyama, Chie Hinoshita et al. · Japanese Journal of Applied Physics · 2002 · 40 citations

Natural Sciences, Materials Science, Electronic Materials +16