Dopant Clustering

Dopant Clustering is a materials science phenomenon in semiconductor physics wherein dopant atoms aggregate non-uniformly within a host lattice, deviating from ideal dispersion and thereby altering local electronic properties and device performance.

74

Publications

3.4K

Citations

306

Authors

146

Institutions

Publications per year

2017–2026

10

Parents

Authors

306

  1. PE
    Ph. Ebert

    Forschungszentrum Jülich, Germany

    4 publications · 93 citations

    4

    h-index

  2. KU
    K. Urban

    Forschungszentrum Jülich, Germany

    3 publications · 67 citations

    3

    h-index

  3. TF
    Thomas F. Kelly

    University of Wisconsin–Madison, United States

    2 publications · 136 citations

    2

    h-index

  4. KT
    Keith Thompson

    Cambridge Scientific (United States), United States

    2 publications · 136 citations

    2

    h-index

  5. ER
    E. R. Weber

    University of California, Berkeley, United States

    2 publications · 20 citations

    2

    h-index

1–5 of 306

Venues

  1. Journal of Applied Physics

    7 publications · 272 citations

    7

    h-index

  2. Applied Physics Letters

    4 publications · 140 citations

    4

    h-index

  3. Physical Review B

    PRB · 3 publications · 93 citations

    3

    h-index

  4. Nature

    3 publications · 887 citations

    3

    h-index

  5. Physical review. B, Condensed matter

    PRB · 3 publications · 82 citations

    3

    h-index

1–5