Dopant Clustering
Dopant Clustering is a materials science phenomenon in semiconductor physics wherein dopant atoms aggregate non-uniformly within a host lattice, deviating from ideal dispersion and thereby altering local electronic properties and device performance.
74
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3.4K
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306
Authors
146
Institutions
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2017–2026
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Atomic-scale imaging of individual dopant atoms and clusters in highly n-type bulk Si
Paul M. Voyles, David A. Muller, J. L. Grazul et al. · Nature · 2002 · 435 citations
Enhancing semiconductor device performance using ordered dopant arrays
Takahiro Shinada, Shintaro Okamoto, Takahiro Kobayashi et al. · Nature · 2005 · 352 citations
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Centre National de la Recherche Scientifique
Paris, France
6 h-index
18 publications
888 citations
Forschungszentrum Jülich
Jülich, Germany
4 h-index
13 publications
326 citations

Chinese Academy of Sciences
Beijing, China
3 h-index
13 publications
560 citations

Zhejiang University
Hangzhou, China
2 h-index
3 publications
128 citations
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
Paris, France
2 h-index
9 publications
327 citations
The University of Tokyo
Tokyo, Japan
2 h-index
5 publications
180 citations

Keio University
Tokyo, Japan
2 h-index
6 publications
231 citations
University of Kent
Canterbury, United Kingdom
2 h-index
2 publications
32 citations
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7 publications · 272 citations
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4 publications · 140 citations
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PRB · 3 publications · 93 citations
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3 publications · 887 citations
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PRB · 3 publications · 82 citations
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