Takahiro Shinada

Enhancing semiconductor device performance using ordered dopant arrays

Takahiro Shinada, Shintaro Okamoto, Takahiro Kobayashi et al. · Nature · 2005 · 352 citations

Engineering, Electrical Engineering, Materials Science +14

Anderson–Mott transition in arrays of a few dopant atoms in a silicon transistor

Enrico Prati, Masahiro Hori, F. Guagliardo et al. · Nature Nanotechnology · 2012 · 118 citations

Engineering, Electrical Engineering, Physics +16

Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation

Syuto Tamura, Godai Koike, Akira Komatsubara et al. · Applied Physics Express · 2014 · 92 citations

Engineering, Materials Engineering, Materials Science +15

Band transport across a chain of dopant sites in silicon over micron distances and high temperatures

Enrico Prati, Kuninori Kumagai, Masahiro Hori et al. · Scientific Reports · 2016 · 42 citations · Full text

Natural Sciences, Materials Science, Physics +16

Improvement of Focused Ion-Beam Optics in Single-Ion Implantation for Higher Aiming Precision of One-by-One Doping of Impurity Atoms into Nano-Scale Semiconductor Devices

Takahiro Shinada, Hikaru Koyama, Chie Hinoshita et al. · Japanese Journal of Applied Physics · 2002 · 40 citations

Natural Sciences, Materials Science, Electronic Materials +16