Discrete random dopant distribution effects in nanometer-scale MOSFETs

Scaling the Si MOSFET: from bulk to SOI to bulk

Ran Yan, A. Ourmazd, K.F. Lee · IEEE Transactions on Electron Devices · 1992 · 897 citations

Engineering, Electrical Engineering, Materials Science +17

CMOS scaling into the nanometer regime

Yuan Taur, D. A. Buchanan, Wei Chen et al. · Proceedings of the IEEE · 1997 · 889 citations

Engineering, Computer Engineering, Electrical Engineering +17

Fundamental limitations in microelectronics—I. MOS technology

B. Hoeneisen, Carver Mead · Solid-State Electronics · 1972 · 364 citations

Engineering, Electrical Engineering, Microelectronics +13

A comparison of semiconductor devices for high-speed logic

P. M. Solomon · Proceedings of the IEEE · 1982 · 191 citations

Engineering, Computer Engineering, Electrical Engineering +12

Three-dimensional "atomistic" simulation of discrete random dopant distribution effects in sub-0.1 μm MOSFET's

H.‐S. Philip Wong, Yuan Taur · 2002 · 186 citations

Engineering, Electrical Engineering, Microelectronics +15