Fundamental limitations in microelectronics—I. MOS technology

Fowler-Nordheim Tunneling into Thermally Grown SiO2

M. Lenzlinger, E. H. Snow · Journal of Applied Physics · 1969 · 1.7K citations

Natural Sciences, Materials Science, Physics +14

Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized Silicon

B. E. Deal, Michael C. Sklar, Andrew S. Grove et al. · Journal of The Electrochemical Society · 1967 · 708 citations

Engineering, Materials Engineering, Materials Science +17

Resistivity of Bulk Silicon and of Diffused Layers in Silicon

J.C. Irvin · Bell System Technical Journal · 1962 · 699 citations

Engineering, Electrical Engineering, Materials Science +17

Ionization Rates for Holes and Electrons in Silicon

S. L. Miller · Physical Review · 1957 · 269 citations

Engineering, Electrical Engineering, Physics +14

Effect of junction curvature on breakdown voltage in semiconductors

Simon M. Sze, G. Gibbons · Solid-State Electronics · 1966 · 263 citations

Engineering, Electrical Engineering, Materials Science +14