Oxide Defect States

Oxide Defect States is a semiconductor physics concept referring to electronic energy levels within the bandgap of a metal-oxide-semiconductor (MOS) capacitor that originate from structural imperfections or impurities in the oxide layer, thereby influencing charge trapping and interface behavior.

1.6K

Publications

86.5K

Citations

5.9K

Authors

1.4K

Institutions

Publications per year

2017–2026

413

Authors

5.9K

  1. DM
    Daniel M. Fleetwood

    Vanderbilt University, United States

    24 publications · 2.4K citations

    23

    h-index

  2. TG
    Tibor Grasser

    TU Wien, Austria

    29 publications · 1.5K citations

    21

    h-index

  3. JR
    John Robertson

    University of Cambridge, United Kingdom

    19 publications · 1.3K citations

    18

    h-index

  4. AS
    A. Stesmans

    KU Leuven, Belgium

    17 publications · 904 citations

    16

    h-index

  5. VV
    V. V. Afanas’ev

    KU Leuven, Belgium

    15 publications · 662 citations

    14

    h-index

1–5 of 5.9K

Venues

  1. Applied Physics Letters

    106 publications · 6.7K citations

    42

    h-index

  2. Journal of Applied Physics

    74 publications · 5.3K citations

    36

    h-index

  3. Applied Surface Science

    50 publications · 3K citations

    28

    h-index

  4. Solid-State Electronics

    61 publications · 3.3K citations

    27

    h-index

  5. IEEE Transactions on Nuclear Science

    36 publications · 2.7K citations

    27

    h-index

1–5