Ge n-MOSFETs on lightly doped substrates with high-/spl kappa/ dielectric and TaN gate

Abstract

We report successful fabrication of germanium n-MOSFETs on lightly doped Ge substrates with a thin HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> dielectric (equivalent oxide thickness /spl sim/10.8 /spl Aring/) and TaN gate electrode. The highest peak mobility (330 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V/spl middot/s) and saturated drive current (130 μA/sq at V/sub g/--V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> =1.5 V) have been demonstrated for n-channel bulk Ge MOSFETs with an ultrathin dielectric. As compared to Si control devices, 2.5× enhancement of peak mobility has been achieved. The poor performance of Ge n-MOSFET devices reported recently and its mechanism have been investigated. Impurity induced structural defects are believed to be responsible for the severe degradation.