Comparison of sub-micron Si:SiGe heterojunction nFETs to Si nMOSFET in present-day technologies

Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors

J.J. Welser · IEEE Electron Device Letters · 1994 · 362 citations

Engineering, Electrical Engineering, Materials Science +17

Fabrication and analysis of deep submicron strained-Si n-MOSFET's

K. Rim, Judy L. Hoyt, J. F. Gibbons · IEEE Transactions on Electron Devices · 2000 · 361 citations

Engineering, Electrical Engineering, Materials Engineering +17

High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture

Sarah H. Olsen, A.G. O’Neill, L.S. Driscoll et al. · IEEE Transactions on Electron Devices · 2003 · 86 citations

Engineering, Electrical Engineering, Materials Science +15

Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy

Steven J. Koester, K. Rim, J. O. Chu et al. · Applied Physics Letters · 2001 · 55 citations

Engineering, Materials Engineering, Materials Science +17

High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET

F. Aniel, M. Enciso-Aguilar, L. Giguerre et al. · Solid-State Electronics · 2002 · 32 citations

Engineering, Electrical Engineering, Materials Science +14