Concepedia

Damage, defects and diffusion from ultra-low energy (0–5 keV) ion implantation of silicon

Aditya Agarwal, H.‐J. Gossmann, D. J. Eaglesham, Lourdes Pelaz, S. B. Herner, D. C. Jacobson, T. E. Haynes, Robert B. Simonton

Materials Science in Semiconductor Processing · 1998 · 50 citations · 24 references

DOI

Concepts

References

24

A Monte Carlo computer program for the transport of energetic ions in amorphous targets

J.P. Biersack, L.G. Haggmark · Nuclear Instruments and Methods · 1980 · 4.7K citations

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Point defects and dopant diffusion in silicon

P. Fahey, Peter B. Griffin, J.D. Plummer · Reviews of Modern Physics · 1989 · 1.4K citations

, , +17

RADIATION DAMAGE IN SEMICONDUCTORS.

P. Baruch · Defense Technical Information Center (DTIC) · 1963 · 564 citations

, , +17

Implantation and transient B diffusion in Si: The source of the interstitials

D. J. Eaglesham, P.A. Stolk, H.-J. Gossmann et al. · Applied Physics Letters · 1994 · 541 citations

, , +17

A Quantitative Model for the Diffusion of Phosphorus in Silicon and the Emitter Dip Effect

Richard B. Fair, J. C. C. Tsai · Journal of The Electrochemical Society · 1977 · 343 citations · Full text

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