Robert B. Simonton

Damage, defects and diffusion from ultra-low energy (0–5 keV) ion implantation of silicon

Aditya Agarwal, H.‐J. Gossmann, D. J. Eaglesham et al. · Materials Science in Semiconductor Processing · 1998 · 50 citations

Engineering, Materials Engineering, Materials Science +14

Boron-enhanced-diffusion of boron: The limiting factor for ultra-shallow junctions

Aditya Agarwal, D. J. Eaglesham, H.‐J. Gossmann et al. · 2002 · 39 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Analysis of the Tilt and Rotation Angle Dependence of Boron Distributions Implanted into <100> Silicon

K. Klein, Changhae Park, A.F. Tasch et al. · Journal of The Electrochemical Society · 1991 · 22 citations

Natural Sciences, Materials Science, Crystal Structure +8

Flux Dependence of Amorphous Layer Formation and Damage Annealing in Room Temperature Implantation of Boron into Silicon

Robert B. Simonton, Jinghong Shi, T. Boden et al. · MRS Proceedings · 1993 · 18 citations

Engineering, Materials Engineering, Materials Science +17

The effect of dose rate on ion implanted impurity profiles in silicon

Shijie Tian, S.‐H. Yang, Stephen Morris et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1996 · 16 citations

Engineering, Materials Science, Electronic Materials +13