J. C. C. Tsai

Statistics

Publications

Citations

857

H-Index

Active since

1969

Affiliations

MCNC Research and Development Institute(Current)

AT&T (United States)

J. C. C. Tsai is an author at MCNC Research and Development Institute specializing in materials science, semiconductor materials, and materials engineering.

Publications per year

1969–1987

Publications

A Quantitative Model for the Diffusion of Phosphorus in Silicon and the Emitter Dip Effect

Richard B. Fair, J. C. C. Tsai · Journal of The Electrochemical Society · 1977 · 343 citations · Full text

Engineering, Materials Science, Physics +17

The Diffusion of Ion‐Implanted Arsenic in Silicon

Richard B. Fair, J. C. C. Tsai · Journal of The Electrochemical Society · 1975 · 114 citations

Engineering, Materials Engineering, Materials Science +17

Shallow phosphorus diffusion profiles in silicon

J. C. C. Tsai · Proceedings of the IEEE · 1969 · 85 citations

Natural Sciences, Materials Engineering, Materials Science +15

The mechanism of simultaneous implantation and sputtering by high energy oxygen ions during secondary ion mass spectrometry (SIMS) analysis

J. C. C. Tsai, J.M. Morabito · Surface Science · 1974 · 61 citations

Natural Sciences, Chemistry, Analytical Chemistry +10

Primary oxygen ion implantation effects on depth profiles by secondary ion emission mass spectrometry

Ruthan Lewis, J.M. Morabito, J. C. C. Tsai · Applied Physics Letters · 1973 · 55 citations

Natural Sciences, Chemistry, Materials Science +15

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