Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1999 · 21 citations · 5 references
Materials ScienceSemiconductorsElectrical EngineeringGallium-gadolinium OxidesEngineeringPure Gallium OxideOxide ElectronicsOxide SemiconductorsApplied PhysicsGaas Surface PassivationWide-bandgap SemiconductorsGallium OxideSemiconductor MaterialThin FilmsCompound Semiconductor
The role of Gd2O3 is investigated in our previously discovered oxide films of Ga2O3(Gd2O3) for GaAs surface passivation. Based on the systematic dependence of the dielectric properties of (Ga2O3)1−x(Gd2O3)x on the Gd (x) content, we showed that pure gallium oxide does not effectively passivate GaAs, and Gd2O3 is a necessary component to stabilize the gallium oxide in the 3+ fully oxidized state due to the electropositive nature of Gd+3. This gives rise to electrically insulting films of low leakage current and high electrical breakdown strength.
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