R. L. Masaitis

Passivation of GaAs using (Ga2O3)1−x(Gd2O3)x, 0⩽x⩽1.0 films

J. Kwo, D. W. Murphy, M. Hong et al. · Applied Physics Letters · 1999 · 80 citations

Semiconductors, Materials Science, Electrical Engineering +13

Characterization of the oxidation of tantalum nitride

A. O. Ibidunni, R. L. Masaitis, R. L. Opila et al. · Surface and Interface Analysis · 1993 · 26 citations

Engineering, Oxidation Resistance, Thin Film Process Technology +17

Passivation of GaAs using gallium-gadolinium oxides

J. Kwo, D. W. Murphy, M. Hong et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1999 · 21 citations

Materials Science, Semiconductors, Electrical Engineering +12

Surface recombination velocities on processed InGaP <i>p</i>-<i>n</i> junctions

S. J. Pearton, F. Ren, W. S. Hobson et al. · Applied Physics Letters · 1993 · 11 citations · Full text

Semiconductor Technology, Surface Recombination Velocities, Electrical Engineering +12