Improved performance of 4H-silicon carbide metal semiconductor field effect transistors with multi-recessed source/drain drift regions

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High-Frequency Solid-State Electronic Devices

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Improved performance of SiC MESFETs using double-recessed structure

C.L. Zhu, Rusli Rusli, C. C. Tin et al. · Microelectronic Engineering · 2005 · 77 citations

Engineering, Electrical Engineering, Materials Science +13

Improved double-recessed 4H-SiC MESFETs structure with recessed source/drain drift region

Jinping Zhang, Xiaorong Luo, Zhaoji Li et al. · Microelectronic Engineering · 2007 · 49 citations

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A novel 4H–SiC MESFET with modified channel depletion region for high power and high frequency applications

Amirhossein Aminbeidokhti, Ali A. Orouji · Physica E Low-dimensional Systems and Nanostructures · 2011 · 41 citations

Engineering, Electrical Engineering, Materials Science +17