Amirhossein Aminbeidokhti

Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices

Sima Dimitrijev, Jisheng Han, Hamid Amini Moghadam et al. · MRS Bulletin · 2015 · 82 citations

Engineering, Electrical Engineering, Materials Science +16

Transient-Current Method for Measurement of Active Near-Interface Oxide Traps in 4H-SiC MOS Capacitors and MOSFETs

Hamid Amini Moghadam, Sima Dimitrijev, Jisheng Han et al. · IEEE Transactions on Electron Devices · 2015 · 64 citations

Engineering, Electrical Engineering, Materials Science +17

A Novel High-Breakdown-Voltage SOI MESFET by Modified Charge Distribution

Amirhossein Aminbeidokhti, Ali A. Orouji, Soude Rahmaninezhad et al. · IEEE Transactions on Electron Devices · 2012 · 52 citations

Engineering, Electrical Engineering, Microelectronics +16

A novel 4H–SiC MESFET with modified channel depletion region for high power and high frequency applications

Amirhossein Aminbeidokhti, Ali A. Orouji · Physica E Low-dimensional Systems and Nanostructures · 2011 · 41 citations

Engineering, Electrical Engineering, Materials Science +17

A novel double-recessed 4H-SiC MESFET with partly undoped space region

Ali A. Orouji, Amirhossein Aminbeidokhti · Superlattices and Microstructures · 2011 · 36 citations

Engineering, Electrical Engineering, Materials Science +14