Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE

Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate

Kensaku Motoki, Takuji Okahisa, Naoki Matsumoto et al. · Japanese Journal of Applied Physics · 2001 · 311 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +13

Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff

Michael K. Kelly, R. P. Vaudo, V. M. Phanse et al. · Japanese Journal of Applied Physics · 1999 · 309 citations · Full text

Laser-induced Liftoff, Wide-bandgap Semiconductor, Electrical Engineering +9

Biaxial strain dependence of exciton resonance energies in wurtzite GaN

A. Shikanai, T. Azuhata, Takayuki Sota et al. · Journal of Applied Physics · 1997 · 250 citations

Materials Science, Semiconductor Technology, Wide-bandgap Semiconductor +11

Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy

Kazumasa Hiramatsu, Theeradetch Detchprohm · Japanese Journal of Applied Physics · 1993 · 229 citations

Materials Science, Thermal Strains, Wide-bandgap Semiconductor +15

Cracking of GaN films

E. V. Etzkorn, D. R. Clarke · Journal of Applied Physics · 2001 · 158 citations

Engineering, Tensile Growth, Mechanical Engineering +19