V. M. Phanse

Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff

Michael K. Kelly, R. P. Vaudo, V. M. Phanse et al. · Japanese Journal of Applied Physics · 1999 · 309 citations · Full text

Laser-induced Liftoff, Wide-bandgap Semiconductor, Electrical Engineering +9

High voltage (450 V) GaN Schottky rectifiers

Zvonimir Bandić, P. M. Bridger, E. C. Piquette et al. · Applied Physics Letters · 1999 · 152 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9

Optical spectroscopy of Si-related donor and acceptor levels in Si-doped GaN grown by hydride vapor phase epitaxy

J. Jayapalan, B. J. Skromme, R. P. Vaudo et al. · Applied Physics Letters · 1998 · 78 citations

Optical Materials, Engineering, Optoelectronic Devices +20

Low-temperature luminescence of exciton and defect states in heteroepitaxial GaN grown by hydride vapor phase epitaxy

B. J. Skromme, J. Jayapalan, R. P. Vaudo et al. · Applied Physics Letters · 1999 · 68 citations

Semiconductors, Wide-bandgap Semiconductor, Photoluminescence +14

Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire

Yuval Golan, Xuehua Wu, James S. Speck et al. · Applied Physics Letters · 1998 · 59 citations

Materials Engineering, Materials Science, Electrical Engineering +14