P. M. Bridger

High voltage (450 V) GaN Schottky rectifiers

Zvonimir Bandić, P. M. Bridger, E. C. Piquette et al. · Applied Physics Letters · 1999 · 152 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9

Minority carrier diffusion length and lifetime in GaN

Zvonimir Bandić, P. M. Bridger, E. C. Piquette et al. · Applied Physics Letters · 1998 · 146 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

Electron diffusion length and lifetime in <b> <i>p</i> </b>-type GaN

Zvonimir Bandić, P. M. Bridger, E. C. Piquette et al. · Applied Physics Letters · 1998 · 117 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11

Measurement of induced surface charges, contact potentials, and surface states in GaN by electric force microscopy

P. M. Bridger, Zvonimir Bandić, E. C. Piquette et al. · Applied Physics Letters · 1999 · 87 citations

Wide-bandgap Semiconductor, Electric Force Microscopy, Engineering +19

The values of minority carrier diffusion lengths and lifetimes in GaN and their implications for bipolar devices

Zvonimir Bandić, P. M. Bridger, E. C. Piquette et al. · Solid-State Electronics · 2000 · 75 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Bipolar Devices +7