P. M. Bridger - Concepedia

Author

P. M. Bridger

California Institute of Technology

Also Known As

Bridger, Paul M., P. M. Bridger, P.M Bridger, P.M. Bridger

Publications

782

Citations

H-Index

Concepts

All Affiliations

California Institute of Technology University of Wisconsin–Madison

About

P. M. Bridger is an author at California Institute of Technology specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	12	760
2	Applied Physics	11	12	760
3	Electrical Engineering	8	8	644
4	Materials Science	4	4	199
5	Medicine	2	2	36

P. M. Bridger

Publications

760

Citations

H-Index

Page 1

	Year	Citations
High voltage (450 V) GaN Schottky rectifiers Zvonimir Bandić, P. M. Bridger, E. C. Piquette, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringHigh Voltage EngineeringApplied Physics	1999	152
Minority carrier diffusion length and lifetime in GaN Zvonimir Bandić, P. M. Bridger, E. C. Piquette, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringEngineeringElectron Microscopy	1998	146
Electron diffusion length and lifetime in <b> <i>p</i> </b>-type GaN Zvonimir Bandić, P. M. Bridger, E. C. Piquette, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesElectron Diffusion Length	1998	117
Measurement of induced surface charges, contact potentials, and surface states in GaN by electric force microscopy P. M. Bridger, Zvonimir Bandić, E. C. Piquette, Applied Physics Letters Wide-bandgap SemiconductorElectric Force MicroscopyEngineeringMicroscopyInduced Surface Charges	1999	87
The values of minority carrier diffusion lengths and lifetimes in GaN and their implications for bipolar devices Zvonimir Bandić, P. M. Bridger, E. C. Piquette, Solid-State Electronics Wide-bandgap SemiconductorSemiconductor TechnologyBipolar DevicesElectrical EngineeringEngineering	2000	75
Charge storage in CeO2/Si/CeO2/Si(111) structures by electrostatic force microscopy J. T. Jones, P. M. Bridger, O. J. Marsh, Applied Physics Letters Materials ScienceImage Localized DotsNanoscale ScienceEngineeringNanotechnology	1999	50
Correlation between the surface defect distribution and minority carrier transport properties in GaN P. M. Bridger, Zvonimir Bandić, E. C. Piquette, Applied Physics Letters Wide-bandgap SemiconductorEngineeringGan FilmsSemiconductorsSurface Dislocations	1998	32
Morphology, polarity, and lateral molecular beam epitaxy growth of GaN on sapphire E. C. Piquette, P. M. Bridger, Zvonimir Bandić, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Materials ScienceWide-bandgap SemiconductorEngineeringPhysicsNanotechnology	1999	30
Observation of nanometer-scale optical property discrimination by use of a near-field scanning apertureless microscope P. M. Bridger, T. C. McGill Optics Letters EngineeringNano-opticsMicroscopyFundamental IssuesOptical Characterization	1999	25
Nitride based high power devices: design and fabrication issues Zvonimir Bandić, E. C. Piquette, P. M. Bridger, Solid-State Electronics Electrical EngineeringEngineeringHigh Power DevicesApplied PhysicsAluminum Gallium Nitride	1998	22

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