R. P. Vaudo

Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff

Michael K. Kelly, R. P. Vaudo, V. M. Phanse et al. · Japanese Journal of Applied Physics · 1999 · 309 citations · Full text

Laser-induced Liftoff, Wide-bandgap Semiconductor, Electrical Engineering +9

High voltage (450 V) GaN Schottky rectifiers

Zvonimir Bandić, P. M. Bridger, E. C. Piquette et al. · Applied Physics Letters · 1999 · 152 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9

Characteristics of semi-insulating, Fe-doped GaN substrates

R. P. Vaudo, Xueping Xu, A.D. Salant et al. · physica status solidi (a) · 2003 · 100 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +9

9.4-W/mm Power Density AlGaN–GaN HEMTs on Free-Standing GaN Substrates

K. Chu, P.C. Chao, M.T. Pizzella et al. · IEEE Electron Device Letters · 2004 · 95 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +11

Optical spectroscopy of Si-related donor and acceptor levels in Si-doped GaN grown by hydride vapor phase epitaxy

J. Jayapalan, B. J. Skromme, R. P. Vaudo et al. · Applied Physics Letters · 1998 · 78 citations

Optical Materials, Engineering, Optoelectronic Devices +20