Jenq-Dar Tsay

Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE

E. Richter, Ch. Hennig, M. Weyers et al. · Journal of Crystal Growth · 2005 · 62 citations

Engineering, Materials Engineering, Materials Science +15

The growth mechanism of GaN grown by hydride vapor phase epitaxy in N2 and H2 carrier gas

Liu Hai-ping, Jenq-Dar Tsay, Wen-Yueh Liu et al. · Journal of Crystal Growth · 2003 · 31 citations

Engineering, Materials Engineering, Materials Science +13

Strain-reduced GaN thick-film grown by hydride vapor phase epitaxy utilizing dot air-bridged structure

Hsin-Hsiung Huang, Tung-Wei Chi, Yu-Lin Chang et al. · Journal of Crystal Growth · 2009 · 16 citations

Engineering, Materials Engineering, Materials Science +16

Method for modulating the wafer bow of free-standing GaN substrates via inductively coupled plasma etching

Kuei-Ming Chen, Yen-Hsien Yeh, Yin-Hao Wu et al. · Journal of Crystal Growth · 2010 · 13 citations

Engineering, Materials Engineering, Electronic Materials +8

Characteristics of a-Plane Green Light-Emitting Diode Grown on r-Plane Sapphire

Shih-Chun Ling, Te‐Chung Wang, Junrong Chen et al. · IEEE Photonics Technology Letters · 2009 · 10 citations

Engineering, Electrical Engineering, Materials Science +15