Te‐Chung Wang

Improvement of near-ultraviolet InGaN-GaN light-emitting diodes with an AlGaN electron-blocking layer grown at low temperature

R. C. Tu, C. J. Tun, Shyi‐Ming Pan et al. · IEEE Photonics Technology Letters · 2003 · 42 citations

Engineering, Electrical Engineering, Materials Science +17

Ultra-High-Density InGaN Quantum Dots Grown by Metalorganic Chemical Vapor Deposition

R. C. Tu, C. J. Tun, Chang‐Cheng Chuo et al. · Japanese Journal of Applied Physics · 2004 · 27 citations

Natural Sciences, Materials Engineering, Materials Science +16

Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an <i>in situ</i> rough SiNx interlayer in <i>n</i>-GaN layers

R. C. Tu, Chang‐Cheng Chuo, Shyi‐Ming Pan et al. · Applied Physics Letters · 2003 · 19 citations

Engineering, Electrical Engineering, Materials Science +17

Improvement of InGaN/GaN laser diodes by using a Si-doped In/sub 0.23/Ga/sub 0.77/N/GaN short-period superlattice tunneling contact layer

R. C. Tu, C. J. Tun, Jinn‐Kong Sheu et al. · IEEE Electron Device Letters · 2003 · 15 citations

Engineering, Electrical Engineering, Materials Science +17

Characteristics of a-Plane Green Light-Emitting Diode Grown on r-Plane Sapphire

Shih-Chun Ling, Te‐Chung Wang, Junrong Chen et al. · IEEE Photonics Technology Letters · 2009 · 10 citations

Engineering, Electrical Engineering, Materials Science +15