Chang‐Cheng Chuo - Concepedia

Author

Chang‐Cheng Chuo

National Central University

Also Known As

C Chuo, C. C. Chuo, C.-C Chuo, C.-C. Chuo, C.C Chuo, C.C. Chuo, Chang-Cheng Chuo, ChangCheng Chuo, Chang‐Cheng Chuo

Publications

1.4K

Citations

H-Index

Concepts

All Affiliations

National Central University University of Florida Industrial Technology Research Institute National Taiwan University National Yang Ming Chiao Tung University

About

Chang‐Cheng Chuo is an author at National Central University specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	23	32	1.3K
2	Applied Physics	23	32	1.3K
3	Electrical Engineering	19	24	966
4	Materials Science	8	8	301
5	Materials Engineering	1	1	20

Chang‐Cheng Chuo

Publications

1.3K

Citations

H-Index

Page 1

	Year	Citations
Structure and formation mechanism of V defects in multiple InGaN∕GaN quantum well layers Makoto Shiojiri, Chang‐Cheng Chuo, J. T. Hsu, Journal of Applied Physics EngineeringHexagonal Pyramid DefectsTransmission Electron MicroscopyV DefectsSemiconductor Nanostructures	2006	137
GaN electronics for high power, high temperature applications S. J. Pearton, F. Ren, A.P. Zhang, Materials Science and Engineering B Electrical EngineeringEngineeringApplied PhysicsGan Power DevicePower Electronics	2001	102
Gd 2 O 3 / GaN metal-oxide-semiconductor field-effect transistor J. W. Johnson, B. Luo, F. Ren, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringElemental GdEngineeringGan Mosfet	2000	97
High voltage GaN Schottky rectifiers G. Dang, A.P. Zhang, F. Ren, IEEE Transactions on Electron Devices Low BiasesWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering	2000	84
Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells Chang‐Cheng Chuo, Chia-Ming Lee, Jen-Inn Chyi Applied Physics Letters SemiconductorsWide-bandgap SemiconductorSemiconductor TechnologyEngineeringPhysics	2001	81
Comparison of GaN p-i-n and Schottky rectifier performance Alan Zhan, G. Dang, F. Ren, IEEE Transactions on Electron Devices Electrical EngineeringEngineeringPower DeviceNanoelectronicsDevice Size	2001	74
Direct measurement of piezoelectric field in In0.23Ga0.77N/GaN multiple quantum wells by electrotransmission spectroscopy C. Y. Lai, T. M. Hsu, Wen‐Hao Chang, Journal of Applied Physics Wide-bandgap SemiconductorCategoryquantum ElectronicsEngineeringPiezoelectric FieldSemiconductors	2002	61
Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells Chang‐Cheng Chuo, C.-M. Lee, Tzer‐En Nee, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringStructural PropertiesPostgrowth Thermal Annealing	2000	56
Temperature dependence of the radiative recombination zone in InGaN/GaN multiple quantum well light-emitting diodes Chia-Ming Lee, Chang‐Cheng Chuo, Jing-Fu Dai, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringTemperature DependenceGan FilmsNanoelectronics	2001	43
Improvement of near-ultraviolet InGaN-GaN light-emitting diodes with an AlGaN electron-blocking layer grown at low temperature R. C. Tu, C. J. Tun, Shyi‐Ming Pan, IEEE Photonics Technology Letters Wide-bandgap SemiconductorElectrical EngineeringLt-grown Algan LayerEngineeringSolid-state Lighting	2003	42

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