Structure and formation mechanism of V defects in multiple InGaN∕GaN quantum well layers

Abstract

A variety of different transmission electron microscopy techniques, and particularly high-angle annular dark-field scanning transmission electron microscopy, has been used to reveal that V defects or inverted hexagonal pyramid defects in multiple InGaN∕GaN quantum well (QW) layers nucleate on threading dislocations that cross the InGaN QW. The defects have thin walls lying parallel to {101¯1} with the InGaN∕GaN QW structure. A formation mechanism for the V defects is proposed taking into account the growth kinetics of GaN and the segregation of In atoms in the strain field around the cores of the threading dislocations.