Japanese Journal of Applied Physics · 2004 · 27 citations · 8 references
Natural SciencesMaterials EngineeringMaterials ScienceOptical MaterialsOptoelectronicsSemiconductor MaterialsOptical Properties Of SemiconductorsQuantum ConfinementQuantum DotsSemiconductor NanomaterialsSemiconductor PhysicsSemiconductor SurfacesGallium Nitride (Gan) MaterialsOptical Property ChangesOptical Property ModificationPhotoluminescencePhotoluminescence SpectroscopyQuantum Dot MaterialsSemiconductor Quantum Dots
This study examined how the duration of SiNx treatment on an underlying GaN layer affects the optical property, surface morphology and density of following InGaN quantum dots (QDs). InGaN QDs with extremely high density of near 3×1011 cm-2 exhibited strong photoluminescence (PL) emission at room temperature (RT). Increasing the duration of the SiNx treatment of the underlying GaN layer, the RT-PL peak of the following InGaN nano-islands and QDs was found to be red-shifted from the violet to the greenish region, and the spectrum was broadened. Additionally, the average height of InGaN nano-islands and QDs increased with the duration of SiNx treatment, explaining the redshift of the RT-PL peak.
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