Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor deposition

Abstract

We have successfully grown nanometer-scale InGaN self-assembled quantum dots (QDs) on a GaN surface without any surfactants, using atmospheric-pressure metalorganic chemical vapor deposition. Atomic force microscopy shows that the average diameter of InGaN QDs is as small as 8.4 nm. Next, we have investigated the dependence of the QDs properties on the growth conditions: the amount of InGaN deposited and the growth temperature. Moreover, we have investigated the optical property of InGaN QDs, so that the strong emission was seen at 2.86 eV at room temperature.