Self-assembling GaN quantum dots on Al<i>x</i>Ga1−<i>x</i>N surfaces using a surfactant

Satoru Tanaka, Sohachi Iwai, Yoshinobu Aoyagi

Applied Physics Letters

SemiconductorsMaterials ScienceAluminium NitrideEngineeringAl Content +11

The formation of GaN dots on AlxGa1−xN surfaces using Si in gas-source molecular beam epitaxy

Xu‐Qiang Shen, Satoru Tanaka, Sohachi Iwai, +1

Applied Physics Letters

Materials ScienceAluminium NitrideWide-bandgap SemiconductorEngineeringGan Dots +11

Characteristics of laser metalorganic vapor-phase epitaxy in GaAs

Yoshinobu Aoyagi, Manabu Kanazawa, Atsutoshi Doi, +2

Journal of Applied Physics

SemiconductorsMaterials EngineeringElectrical EngineeringMaterials ScienceLaser Movpe +11

Atomic layer epitaxy of AlP and its application to X-ray multilayer mirror

Masashi Ishii, Sohachi Iwai, Hiroki Kawata, +2

Journal of Crystal Growth

Materials ScienceAluminium NitrideEngineeringX-ray Multilayer MirrorPhysics +8

A Growth Analysis for Metalorganic Vapor Phase Epitaxy of GaAs

Atsutoshi Doi, Sohachi Iwai, Takashi Meguro, +1

Japanese Journal of Applied Physics

EngineeringCrystal Growth TechnologyConventional MovpeChemical DepositionSemiconductors +14

High hole carrier concentration realized by alternative co-doping technique in metal organic chemical vapor deposition

Yoshinobu Aoyagi, Misaichi Takeuchi, Sohachi Iwai, +1

Applied Physics Letters

Wide-bandgap SemiconductorEngineeringOrganic ElectronicsSemiconductor MaterialsOptoelectronic Devices +19

ZnO LASER BY ELECTRON BEAM EXCITATION

Sohachi Iwai, Susumu Namba

Applied Physics Letters

Optical MaterialsEngineeringLaser ScienceLaser-plasma InteractionLaser Physics +20

Emission Spectra in CdS under High Excitation by Electron Beam

Sohachi Iwai, Susumu Namba

Applied Physics Letters

Optical MaterialsEngineeringLaser ApplicationsLuminescence PropertyElectronic Excited State +18

Reduction of the defect density in GaN films using ultra-thin AlN buffer layers on 6H-SiC

Satoru Tanaka, Sohachi Iwai, Yoshinobu Aoyagi

Journal of Crystal Growth

Materials EngineeringMaterials ScienceElectrical EngineeringAluminium NitrideEngineering +6

Study of interface states in the metal-semiconductor junction using deep level transient spectroscopy

Han Zhang, Yoshinobu Aoyagi, Sohachi Iwai, +1

Applied Physics Letters

SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringPhysics +9